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| ZXMP3A17E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.07 ID = -4.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT23-6 package APPLICATIONS * DC - DC Converters * Power Management Functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE ZXMP3A17E6TA ZXMP3A17E6TC REEL SIZE 7" 13" TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 units 10000 units PINOUT DEVICE MARKING * 317 Top View PROVISIONAL ISSUE C - AUGUST 2002 1 ZXMP3A17E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =10V; T A =25C (b) V GS =10V; T A =70C (b) V GS =10V; T A =25C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25C (a) Linear Derating Factor Power Dissipation at T A =25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT -30 20 -4.0 -3.2 -3.2 -14.4 -2.5 -14.4 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 113 73 UNIT C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. PROVISIONAL ISSUE C - AUGUST 2002 2 ZXMP3A17E6 CHARACTERISTICS 1.2 10 Max Power Dissipation (W) -ID Drain Current (A) RDS(ON) Limited 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 1 DC 1s 100ms 10ms 1ms 100us 100m 10m 0.1 Single Pulse, Tamb=25C 1 10 P-channel Safe Operating Area -VDS Drain-Source Voltage (V) Temperature (C) Derating Curve Thermal Resistance (C/W) 100 80 D=0.5 60 40 20 0 100 1m 10m 100m Single Pulse D=0.2 D=0.05 D=0.1 MaximumPower (W) 100 Single Pulse Tamb=25C 10 1 100 1m 10m 100m 1 10 100 1k 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation PROVISIONAL ISSUE C - AUGUST 2002 3 ZXMP3A17E6 ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage V (BR)DSS I DSS I GSS V GS(th) -0.8 0.070 0.110 6.4 S -30 -0.5 100 V A nA V I D =-250 A, V GS =0V V DS =-30V, V GS =0V V GS = 20V, V DS =0V I =-250 A, V DS = V GS D V GS =-10V, I D =-3.2A V GS =-4.5V, I D =-2.5A V DS =-15V,I D =-3.2A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) V SD t rr Q rr -0.85 19.5 16.3 t d(on) tr t d(off) tf Qg Qg Q gs Q gd 1.74 2.87 29.2 8.72 8.28 15.8 1.84 2.8 C iss C oss C rss 630 113 78 g fs pF pF pF V DS =-15V, V GS =0V, f=1MHz ns ns ns ns nC nC nC nC V DS =-15V,V GS =-10V, I D =-3.2A V DS =-15V,V GS =-5V, I D =-3.2A V DD =-15V, I D =-1A R G =6.0 , V GS =-10V -1.2 V ns nC T J =25C, I S =-2.5A, V GS =0V T J =25C, I F =-1.7A, di/dt= 100A/s NOTES (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE C - AUGUST 2002 4 ZXMP3A17E6 TYPICAL CHARACTERISTICS T = 25C 10V 5V T = 150C 10V -ID Drain Current (A) 1 2.5V -VGS 2V -ID Drain Current (A) 10 4V 5V 3.5V 3V 10 4V 3.5V 3V 2.5V 2V 1 -VGS 1.5V 0.1 0.1 0.01 0.1 -VDS Drain-Source Voltage (V) 1 10 0.01 0.1 -VDS Drain-Source Voltage (V) 1 10 Output Characteristics 1.4 Normalised RDS(on) and VGS(th) Output Characteristics VGS = -10V ID = -3.2A RDS(on) 10 -ID Drain Current (A) 1.2 1.0 T = 150C 1 T = 25C VGS(th) 0.8 VGS = VDS ID = -250uA 0.1 1 2 -VDS = 10V 3 4 0.6 -50 0 50 100 150 -VGS Gate-Source Voltage (V) Tj Junction Temperature (C) Typical Transfer Characteristics RDS(on) Drain-Source On-Resistance () 2V -VGS T = 25C 2.5V 3V 3.5V Normalised Curves v Temperature 10 -ISD Reverse Drain Current (A) 10 T = 150C 1 T = 25C 1 4V 5V 10V 0.1 0.1 0.1 1 10 0.01 0.2 On-Resistance v Drain Current -ID Drain Current (A) -VSD Source-Drain Voltage (V) 0.4 0.6 0.8 1.0 1.2 Source-Drain Diode Forward Voltage PROVISIONAL ISSUE C - AUGUST 2002 5 ZXMP3A17E6 TYPICAL CHARACTERISTICS 1000 10 C Capacitance (pF) 800 600 400 200 0 0.1 1 CISS COSS -VGS Gate-Source Voltage (V) VGS = 0V f = 1MHz ID = -3.2A 8 6 4 2 VDS = -15V CRSS 10 0 0 5 10 15 20 -VDS - Drain - Source Voltage (V) Q - Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge PROVISIONAL ISSUE C - AUGUST 2002 6 ZXMP3A17E6 PACKAGE OUTLINE PAD LAYOUT DETAILS b e L2 E E1 e1 D a DATUM A C A A2 A1 CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES. PACKAGE DIMENSIONS Millimetres DIM Min A A1 A2 b C D 0.90 0.00 0.90 0.35 0.09 2.80 Max 1.45 0.15 1.30 0.50 0.20 3.00 Min 0.35 0 0.035 0.014 0.0035 0.110 Max 0.057 0.006 0.051 0.019 0.008 0.118 E E1 L e e1 L Inches DIM Min 2.60 1.50 0.10 Max 3.00 1.75 0.60 Min 0.102 0.059 0.004 Max 0.118 0.069 0.002 Millimetres Inches 0.95 REF 1.90 REF 0 10 0.037 REF 0.074 REF 0 10 (c) Zetex plc 2002 Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 uk.sales@zetex.com Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com PROVISIONAL ISSUE C - AUGUST 2002 7 |
Price & Availability of ZXMP3A17E6TC
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